Browse Prior Art Database

Silicon Dioxide Defect Detector

IP.com Disclosure Number: IPCOM000088553D
Original Publication Date: 1977-Jun-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Bogardus, EH: AUTHOR [+3]

Abstract

Small pinhole-type defects in thin insulating layers, such as a silicon dioxide layer on a silicon wafer, can be detected by changes in the current-voltage characteristic of a signal applied across the layer and its substrate through a conformal fluid backed platinum electrode contacting the insulator and a good electrically conducting pin contacting the substrate.

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Silicon Dioxide Defect Detector

Small pinhole-type defects in thin insulating layers, such as a silicon dioxide layer on a silicon wafer, can be detected by changes in the current-voltage characteristic of a signal applied across the layer and its substrate through a conformal fluid backed platinum electrode contacting the insulator and a good electrically conducting pin contacting the substrate.

The electrode structure (Fig. 1) for detecting, for example, a pinhole in a SiO(2) layer on a Si wafer is shown along with the current-voltage characteristic for both the presence and absence of a defect, (Figs. 2 and 3). In addition, the pinholes are made visible through a plating effect which decorates the defects. If a NaCl solution is used as the electrolyte, then a white film clearly outlines the defect or distribution of defects.

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