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Pre Emitter Argon Implant Gettering

IP.com Disclosure Number: IPCOM000088636D
Original Publication Date: 1977-Jul-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 80K

Publishing Venue

IBM

Related People

Nagasaki, T: AUTHOR [+3]

Abstract

This article describes an impurity gettering method to improve the hot process yield. The steps are as follows: 1. Proceed with the subcollector, isolation diffusions on a P-substrate, then grow N- epi onto the substrate, followed by recess oxidation isolation (ROI), and base diffusion and reoxidation, as shown in Fig. 1. 2. (a) Remove the oxide at the back surface of the wafer by conventional photoresist or vapor HF etch process for argon ion implantation, as shown in Fig. 2A, or (b) Remove some of the oxide at the back surface, and leave approximately 800 angstroms SiO(2), as shown in Fig. 2B. 3.

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Pre Emitter Argon Implant Gettering

This article describes an impurity gettering method to improve the hot process yield. The steps are as follows: 1. Proceed with the subcollector, isolation diffusions on a

P-substrate, then grow N- epi onto the substrate, followed by

recess oxidation isolation (ROI), and base diffusion and

reoxidation, as shown in Fig. 1.

2. (a) Remove the oxide at the back surface of the wafer by

conventional photoresist or vapor HF etch process

for argon ion implantation, as shown in Fig. 2A, or

(b) Remove some of the oxide at the back surface, and leave

approximately 800 angstroms SiO(2), as shown in Fig. 2B.

3. In either case of 2(a) or 2(b), use argon dosage of 5 x 10/15/ to

1 x 10/16/ atoms/cm/2/ at between 75 to 150 mu a and between 75 to

150 KeV for implantation. In the case of 2B, there is

additional knock-on O(2) or Si effect into the wafer through the

SiO(2) layer by the argon.

4. Deposit Si (3) N (4) and pyrolytic silicon dioxide (pyro-SiO(2)) layers 4 and 5, respectively, onto the front side of the wafer

at 1000 degrees C. During this chemical vapor deposition process,

the fast-moving impurities, such as Cu, Au, Fe, Ni, etc.,

resident in the vicinity of the active device areas are

gettered at the implantation damage sites in layer 6, as

shown in Fig. 3.

5. After opening the holes in the Si(3)N(4) and pyro-SiO(2) layers 4

and 5 for the emitter, arsenic capsule diffusion or arsenic

implantation is given to the wafer to form the emitt...