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Built In Getter Centers for Metallic Impurities in Wafer Areas Not Needed for Active Devices

IP.com Disclosure Number: IPCOM000088655D
Original Publication Date: 1977-Jul-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Malin, K: AUTHOR [+2]

Abstract

Highly doped areas on device wafers contain mismatch dislocations that readily getter metallic impurities. Such areas can be generated by exposing them to, at least, two successive doping diffusions in such a manner that in these areas the diffused portions of the wafer overlap, at least, partly.

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Built In Getter Centers for Metallic Impurities in Wafer Areas Not Needed for Active Devices

Highly doped areas on device wafers contain mismatch dislocations that readily getter metallic impurities. Such areas can be generated by exposing them to, at least, two successive doping diffusions in such a manner that in these areas the diffused portions of the wafer overlap, at least, partly.

These diffusions are best produced simultaneously with the diffusions necessary for manufacturing the active devices.

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