Browse Prior Art Database

Increasing the Selectivity of the Plasma Etch Rate of SiO(2) Relative to Si

IP.com Disclosure Number: IPCOM000088719D
Original Publication Date: 1977-Jul-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Coburn, JW: AUTHOR

Abstract

In certain semiconductor manufacturing Processes, plasma etching is employed to etch through a layer of SiO(2) down to a Si underlayer or substrate. In most situations, Si etches faster than SiO(2), thereby making it difficult to carry out the SiO(2) etching to completion without etching significantly into the Si underlayer.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Increasing the Selectivity of the Plasma Etch Rate of SiO(2) Relative to Si

In certain semiconductor manufacturing Processes, plasma etching is employed to etch through a layer of SiO(2) down to a Si underlayer or substrate. In most situations, Si etches faster than SiO(2), thereby making it difficult to carry out the SiO(2) etching to completion without etching significantly into the Si underlayer.

A new method has been developed which permits etching of SiO(2) at a faster rate than Si. This method involves the use of water vapor in a CF (4) plasma etching glow discharge. The amount of water vapor is critical since less than a certain quantity of water causes the Si to etch faster than SiO(2). The effect of the flow rate of water vapor on the relative etch rates of Si and SiO(2) is shown in the drawing.

1

Page 2 of 2

2

[This page contains 3 pictures or other non-text objects]