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Browse Prior Art Database

System for Varying the Directionality in Plasma Etching

IP.com Disclosure Number: IPCOM000088839D
Original Publication Date: 1977-Aug-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Bhattacharya, S: AUTHOR

Abstract

Etch profiles in a reactive ion etch system are normally vertical when the workpiece is placed at the cathode. Where desired, the angle of etch can be tailored and controlled by the combination of diode coupled and inductively coupled systems with separate RF generators and matching networks, as shown in the figure.

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System for Varying the Directionality in Plasma Etching

Etch profiles in a reactive ion etch system are normally vertical when the workpiece is placed at the cathode. Where desired, the angle of etch can be tailored and controlled by the combination of diode coupled and inductively coupled systems with separate RF generators and matching networks, as shown in the figure.

By controlling the ratio of the power input by the two couplings, the directionality of the plasma is controlled, from fully directional to completely random, to obtain various etch profiles. The combination of capacitive and inductive systems will confine the plasma in the

(Image Omitted)

center portion of the coil where the etch chamber dimensions, 1 over d, are much greater than 1 because the magnetic field will be at a maximum in the center part of the coil. This has the additional advantage of reducing deposits on the walls of the chamber.

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