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Browse Prior Art Database

Adhesion and Release Layer for Resist Structures

IP.com Disclosure Number: IPCOM000088840D
Original Publication Date: 1977-Aug-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fredericks, EC: AUTHOR

Abstract

Polyvinylcarbazole is coated to a thickness of 500 to 2,000 angstroms on sputtered quartz to provide adhesion for an overlying resist layer, such as a novolak resin-diazo quinone containing resist. The polyvinylcarbazole is stable to the alkaline developer used to develop the resist and can be removed in the image areas by reactive ion etching in O(2) or CF(4) O(2) gas combinations. When the substrate etching process, such as via hole formation is completed, the polyvinylcarbazole is easily removed along with the overlying resist layer in N-methylpyrrolidone at about 100 Degrees C. The layer can also be used under other resists and polymer layers, such as polymethylmethacrylate, polycarbonate, polyvinyladiohol and polysulfone.

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Adhesion and Release Layer for Resist Structures

Polyvinylcarbazole is coated to a thickness of 500 to 2,000 angstroms on sputtered quartz to provide adhesion for an overlying resist layer, such as a novolak resin-diazo quinone containing resist. The polyvinylcarbazole is stable to the alkaline developer used to develop the resist and can be removed in the image areas by reactive ion etching in O(2) or CF(4) O(2) gas combinations.

When the substrate etching process, such as via hole formation is completed, the polyvinylcarbazole is easily removed along with the overlying resist layer in N-methylpyrrolidone at about 100 Degrees C.

The layer can also be used under other resists and polymer layers, such as polymethylmethacrylate, polycarbonate, polyvinyladiohol and polysulfone.

When used in thicker layers under resists, such as methacrylate polymers and copolymers or polysulfones, which have low resistance to reactive ion etching, the polyvinylcarbazole will act as a reactive ion etch resist layer.

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