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Photoresist Stripping Process

IP.com Disclosure Number: IPCOM000088841D
Original Publication Date: 1977-Aug-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

McHugh, J: AUTHOR [+2]

Abstract

Resist layers which have been subject to post-baking temperatures during processing in excess of 150 Degrees C, i.e., plasma etching, are stripped by the following procedure. The described process also prolongs the useful life of the acid strip bath and provides an effective manufacturing process.

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Photoresist Stripping Process

Resist layers which have been subject to post-baking temperatures during processing in excess of 150 Degrees C, i.e., plasma etching, are stripped by the following procedure. The described process also prolongs the useful life of the acid strip bath and provides an effective manufacturing process.

Prestrip cycle: Treat resist in AZ303 (available from Shipley Corporation) alkaline developer at room temperature for 15 minutes, and then rinse in filtered deionized water and dry.

Strip cycle: Treat resist with a mixture of potassium persulfate and concentrated sulfuric acid for 10 minutes at room temperature. Finally, rinse in filtered (0.22 micron) deionized water, and centrifuge dry.

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