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Browse Prior Art Database

In Situ Thermal Control Monitor System for Reactive Ion Etch Process

IP.com Disclosure Number: IPCOM000088842D
Original Publication Date: 1977-Aug-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Gartner, HM: AUTHOR [+4]

Abstract

The wafer temperature in an etching process is monitored and controlled. Wafer 1 is placed on cathode plate 2 in vacuum chamber 3. The wafer temperature is monitored during reactive ion etching by thermocouple 4 which is located in conically shaped cavity 5 in plate 2. Cavity 5 is lined with an aluminized surface to reflect heat into the thermocouple junction with the cavity being approximately four times the size of the thermocouple junction maximum. Thermocouple 4 is connected to temperature feedback amplification electronics 6, in situ temperature readout monitor 7, and heat control electronics 8. Heat control electronics 8 controls power supply 9 for radiation heater 10. The structure achieves fast response temperature feedback control and maintains the wafer temperature required for uniform etching.

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In Situ Thermal Control Monitor System for Reactive Ion Etch Process

The wafer temperature in an etching process is monitored and controlled. Wafer 1 is placed on cathode plate 2 in vacuum chamber 3. The wafer temperature is monitored during reactive ion etching by thermocouple 4 which is located in conically shaped cavity 5 in plate 2. Cavity 5 is lined with an aluminized surface to reflect heat into the thermocouple junction with the cavity being approximately four times the size of the thermocouple junction maximum. Thermocouple 4 is connected to temperature feedback amplification electronics 6, in situ temperature readout monitor 7, and heat control electronics 8. Heat control electronics 8 controls power supply 9 for radiation heater 10. The structure achieves fast response temperature feedback control and maintains the wafer temperature required for uniform etching.

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