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Source Material for the Ion Implantation of Arsenic and Boron

IP.com Disclosure Number: IPCOM000088873D
Original Publication Date: 1977-Aug-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Briska, M: AUTHOR [+3]

Abstract

A compound containing As/III/, B and O, which is obtained by heating a mixture of As(2)0(3) and B(2)0(3), can be used to ion implant As and B.

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Source Material for the Ion Implantation of Arsenic and Boron

A compound containing As/III/, B and O, which is obtained by heating a mixture of As(2)0(3) and B(2)0(3), can be used to ion implant As and B.

To produce a preferred source material of this kind, a hot solution of 20 g B(2)0(3) in about 150 ml H(2)0 is added to about 400 ml of a saturated and filtered aqueous solution of As(4)0(6). This mixture is concentrated to a volume of 50 to 100 ml until a white precipitate is formed which is collected and heated at 750 Degrees C for More Than 10 hours. When used as a source material, this product ensures very constant As and B ion currents at a ratio of 2:1 (e.g., 30 and 15 Micro A, using a 150 keV Danfysik ion implanter) over a long period of time, and is much less poisonous than elemental As.

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