Browse Prior Art Database

Vapor Deposition or Etching Using a TEFLON Mask

IP.com Disclosure Number: IPCOM000088942D
Original Publication Date: 1977-Aug-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Petrak, JR: AUTHOR

Abstract

When sputter depositing or sputter etching a substrate using a standard mask, such as stainless steel, a hump of the mask material forms under the edge of the mask. This is caused by sputtering of the mask material when bombarded by the rare gas ions or the sputtered material. A TEFLON* mask or a stainless steel mask coated with TEFLON material protects the unsputtered areas, and its sputtered species are vacuum pumpable.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Vapor Deposition or Etching Using a TEFLON Mask

When sputter depositing or sputter etching a substrate using a standard mask, such as stainless steel, a hump of the mask material forms under the edge of the mask. This is caused by sputtering of the mask material when bombarded by the rare gas ions or the sputtered material. A TEFLON* mask or a stainless steel mask coated with TEFLON material protects the unsputtered areas, and its sputtered species are vacuum pumpable.

The TEFLON material of the mask is softer and permits a better contact with the substrate surface even if the substrate surface is irregular. The TEFLON material even if decomposed by the sputtering or etching process, becomes volatile and is preferentially pumped away by the vacuum pumps rather than deposited onto the substrate. The hump formed under a mask that occurs with masks of other materials does not form with a mask at least coated with the TEFLON material. * Trademark of E. I. du Pont de Nemours and Co.

1