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Wafer Separation into Nozzle Plates by Etching

IP.com Disclosure Number: IPCOM000088953D
Original Publication Date: 1977-Aug-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 3 page(s) / 79K

Publishing Venue

IBM

Related People

Delaney, J: AUTHOR [+3]

Abstract

A method is described in which, during the fabrication of the ink jet membrane-nozzles, the silicon wafer is separated into plates (Fig. 1) by a series of lithographic and etching steps. This method does not introduce additional steps in nozzle fabrication.

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Wafer Separation into Nozzle Plates by Etching

A method is described in which, during the fabrication of the ink jet membrane-nozzles, the silicon wafer is separated into plates (Fig. 1) by a series of lithographic and etching steps. This method does not introduce additional steps in nozzle fabrication.

The grid lines which define the chip size are incorporated into the masks which are used for nozzle fabrication. The sequence of the main process steps, with the masks which have the grid lines, is shown in Figs. 2-4. The wafer 10 has a film 12, 14 of SiO(2) formed on the surfaces of the wafer, and the wafer is then coated on the top face with a suitable photoresist material 16. The photoresisted wafer is exposed to ultraviolet radiation through an iron oxide mask 18 (Fig. 2). After development, the wafer is immersed in buffered HF for selectively etching the SiO layer 14 (Fig. 3), which is subsequently used as a mask for the silicon etching.

During the silicon etching, grid lines 20 and apertures 22 are formed. SiO(2) layer 12 is then etched to form grid line openings 24 and orifices 26. The resulting structure after the silicon and orifice etching is shown in Fig. 4a. The grid lines 24 are etched in the SiO(2) membrane of the orifice side (during the orifice etching) in order to facilitate the cleavage which is subsequently done by the standard procedure of rolling a cylinder onto the wafer.

The depth of the V-grooves is determined by the width of the opening of...