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Etching Metal Spikes Atop Semiconductor Substrates

IP.com Disclosure Number: IPCOM000089046D
Original Publication Date: 1977-Sep-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bialko, JA: AUTHOR [+3]

Abstract

This is a technique for eliminating shorts in a glass layer which insulates a lower level of Al-Cu-Si metallurgy from an upper level of metal. The shorts are caused by spikes jutting from the lower level of metal through the glass. These spikes are often large enough to pass completely through the glass to the upper level of metal.

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Etching Metal Spikes Atop Semiconductor Substrates

This is a technique for eliminating shorts in a glass layer which insulates a lower level of Al-Cu-Si metallurgy from an upper level of metal. The shorts are caused by spikes jutting from the lower level of metal through the glass. These spikes are often large enough to pass completely through the glass to the upper level of metal.

The shorts can be removed by a specific etchant which does not substantially attack the Al-Cu-Si or leave contaminants. The etchant composition comprises: 2400 mls H(3)PO(4)

700 mls D.I. H(2)O

120 mls HNO(3)

20 drops of 530 IGEPAL*

1% HF by volume. The etchant is applied to the lower metal prior to glassing for up to six minutes. * Trademark of General Aniline & Film Corporation.

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