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Browse Prior Art Database

Charge Depleting Electron Beam Resist Structure

IP.com Disclosure Number: IPCOM000089087D
Original Publication Date: 1977-Sep-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Fredericks, EC: AUTHOR [+3]

Abstract

Pattern distortion caused by induced electrical charging of resists during electron-beam exposure is avoided by the use of a charge-depleting organic polymer layer containing an aromatic ring or rings with one or more nitrogen atoms in the ring.

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Charge Depleting Electron Beam Resist Structure

Pattern distortion caused by induced electrical charging of resists during electron-beam exposure is avoided by the use of a charge-depleting organic polymer layer containing an aromatic ring or rings with one or more nitrogen atoms in the ring.

For example, a vinyl carbazole polymer having a recurring unit (where one or more of the hydrogens can be substituted by O, NO(2), Cl, Br, I, F, CH(3), C(2)H(5), and combinations thereof) is cast over a substrate surface, such as SiO(2), Si, Al, Al/Cu, Si(3)N(4) or polymers' Prior to coating the positive- or negative-acting electron-beam sensitive resist layer which is to be imaged.

The polymers have a molecular weight (Mw) of about 1000 to 2,000,000, and are cast in a thickness of about 1000 to 30,000 angstroms. Other suitable polymers include those derived from indoles, quinoline, isoquinoline, acridine, imidazole, pyrazine, purine and pteridine.

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