Browse Prior Art Database

Wetting Agent for Resist Application

IP.com Disclosure Number: IPCOM000089088D
Original Publication Date: 1977-Sep-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Collini, GJ: AUTHOR

Abstract

Occasionally, virgin SiO(2) surfaces (thermal, doped, sputtered quartz), which have been precoated with hexamethyldisilazane (HMDS), or N,O-bis-(trimethylsilyl)-trifluroacetamide (BSTFA), exhibit poor wettability by resist materials (such as base soluble novolak resin and naphthoquinone-(1,2)-diazide sulfonic acid ester sensitizer mixtures) during spin coating. This poor wetting is characterized by pull back of the resist at the wafer edge, crater formation and, in the extreme, having little or no film coating after spinning.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Wetting Agent for Resist Application

Occasionally, virgin SiO(2) surfaces (thermal, doped, sputtered quartz), which have been precoated with hexamethyldisilazane (HMDS), or N,O-bis- (trimethylsilyl)-trifluroacetamide (BSTFA), exhibit poor wettability by resist materials (such as base soluble novolak resin and naphthoquinone-(1,2)-diazide sulfonic acid ester sensitizer mixtures) during spin coating. This poor wetting is characterized by pull back of the resist at the wafer edge, crater formation and, in the extreme, having little or no film coating after spinning.

Good wettability is obtained and superior adhesion is preserved by dipping BSTFA or HMDS precoated wafers with thermal SiO(2) layers into a 0.1% water solution of gamma aminopropyl triethoxysilane, water rinsing in deionized water and spin or N(2) gas drying. When the resist is applied, no evidence of dewetting is observed. Untreated control surfaces show edge pull back and frequent cratering.

Upon exposing the treated surfaces to light through a Rottman mask, the positive images (lands) remain adherent to the surface, even after 1000 seconds of immersion in dilute aqueous alkaline developer.

1