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High Resolution Negative Mode Electron Beam Resist Process

IP.com Disclosure Number: IPCOM000089089D
Original Publication Date: 1977-Sep-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hood, FP: AUTHOR [+3]

Abstract

High resolution negative patterns are generated from an electron-beam exposed positive resist layer.

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This is the abbreviated version, containing approximately 94% of the total text.

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High Resolution Negative Mode Electron Beam Resist Process

High resolution negative patterns are generated from an electron-beam exposed positive resist layer.

A positive-acting resist layer, including a base soluble resin, such as a novolak resin, and a naphthoquinone-(1,2)-diazide sulfonic acid ester sensitizer, is image-wise exposed to a scanning electron beam. The layer is then subjected to a blanket exposure to light which is sufficient to convert the remaining sensitizer in the electron-beam exposed areas (e.g., a seconds of 200 W Hg lamp). The layer is treated with aqueous H(2)SO(4), 1:4 water with the time and temperature being optimized for the particular resist (e.g., 90 degrees C for 15 minutes). The layer is then subjected to a second blanket exposure to light which is sufficient to convert all the remaining sensitizer in the originally unexposed areas. A negative pattern is then developed by removing the originally unexposed areas of the layer with an aqueous alkaline developer.

Alternatively, the process can be carried out in which the electron-beam exposed layer is first treated with the hot sulfuric acid solution and then blanket exposed to light which is sufficient to convert all the remaining sensitizer. The hot acid treatment is repeated for a short time which is just sufficient to lower the carboxyl content of the originally exposed areas to zero. The negative image is then developed in dilute aqueous alkaline developer. Optionally, a short, 1...