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Modification of Standard Ion Sources for Low Current Applications

IP.com Disclosure Number: IPCOM000089101D
Original Publication Date: 1977-Sep-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Rochet, D: AUTHOR [+2]

Abstract

Medium current ion implanters, although dedicated to medium dose applications, often need to implant low dose applications as well. It is known to use diagrams or slits to reduce the ion beam on the target. This technique has some disadvantages (e.g., frequent changes of slits or diagrams) which, however, may be overcome through minor modification of the anode.

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Modification of Standard Ion Sources for Low Current Applications

Medium current ion implanters, although dedicated to medium dose applications, often need to implant low dose applications as well. It is known to use diagrams or slits to reduce the ion beam on the target. This technique has some disadvantages (e.g., frequent changes of slits or diagrams) which, however, may be overcome through minor modification of the anode.

An aperture located on the anode electrode of the ion source allows a limitation of the maximum current capability by reducing the effective anode area and then limiting the source ionization current.

Other advantages include reduction of the warm-up time, increase of the lifetime of the source, and possible adjustments of the aperture diameter according to the desired current on the target.

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