Browse Prior Art Database

Magnetron Sputtering

IP.com Disclosure Number: IPCOM000089147D
Original Publication Date: 1977-Sep-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Hunter, DR: AUTHOR [+4]

Abstract

Sputter etch and sputter bias can be considered to be two forms of sputtering where the substrate is the target. Without the magnetron enhancement of the sputtering process, the bias and etch currents are subject to the same conditions as standard DC sputtering. High pressure, i.e., in excess of 50 microns, and high voltage differential are necessary to obtain reasonable rates.

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Magnetron Sputtering

Sputter etch and sputter bias can be considered to be two forms of sputtering where the substrate is the target. Without the magnetron enhancement of the sputtering process, the bias and etch currents are subject to the same conditions as standard DC sputtering. High pressure, i.e., in excess of 50 microns, and high voltage differential are necessary to obtain reasonable rates.

As shown in the figure, magnetron-enhanced sputtering, as normally practiced, involves the placement of magnets 1 such that the magnetic field 2 of each magnet leaves and enters the face of the target-cathode 3. The magnetic fields 2, by the placement of the magnets 1, form a closed annular path over the face of the target-cathode 3. The figure shows the path in cross section where the upper magnet 1 forms the upper path of the ring and the lower magnet 1 forms the lower path of the ring. The ring and the field 2 components parallel to the target-cathode 3 cause the secondary electrons emitted by the target- cathode 3 to approach cyclical trajectories along the ring. This effect prevents the electrons from leaving the cathode region and greatly increases the ionization of argon by electrons over nonring techniques. The high degree of ionization and high concentration of argon ions in the plasma achieves high sputtering rates of the target-cathode 3. The material so sputtered from the target-cathode 3 is then deposited onto the substrate 4.

In the disclosed configuratio...