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Method for Changing Tungsten Morphology

IP.com Disclosure Number: IPCOM000089171D
Original Publication Date: 1977-Sep-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

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This method can vary spacings of dendritic tungsten.

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This is the abbreviated version, containing approximately 100% of the total text.

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Method for Changing Tungsten Morphology

This method can vary spacings of dendritic tungsten.

Tungsten deposited by chemical vapor deposition produces a dense random packing of dendrites. It is sometimes desirable to produce less of a dense array. It has been found that a sparse array can be produced by the introduction of helium into the reaction chamber under the otherwise identical condition to produce a dense dendritic array. An example is that 5 to 10 cc/min added to the reaction chamber alters the surface reaction kinetics such that the three- and six- fold preferential growth orientations are suppressed, allowing the single (111) orientation to dominate. Although the dendritic morphology is suppressed, it is not eliminated, and therefore grows in a sparse array.