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Semiconducting Nucleation Layer for NiFe Films

IP.com Disclosure Number: IPCOM000089197D
Original Publication Date: 1977-Sep-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 13K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR

Abstract

The conductor-first single level metallurgy (SLM) bubble devices require deposition of NiFe on top of conductors, for example, gold. When NiFe films are deposited by a dry process, such as evaporation or sputtering, on such conductors, the coercivity is large (several oersteds) and not desirable for device applications.

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Semiconducting Nucleation Layer for NiFe Films

The conductor-first single level metallurgy (SLM) bubble devices require deposition of NiFe on top of conductors, for example, gold. When NiFe films are deposited by a dry process, such as evaporation or sputtering, on such conductors, the coercivity is large (several oersteds) and not desirable for device applications.

In such cases, the coercivity can be lowered by the use of thin (several hundred angstroms) dielectric films between the conductor and NiFe. However, this may present some problems of electrical contacts between the conductor and NiFe, because of the insulating properties of dielectric layers.

To solve these problems, semiconducting TiO(x) films are evaporated, and H(c) is lowered to acceptable levels.

The TiO(x) film is deposited by evaporation from an electron-beam gun in the pressure range of 2x10/-5/ to 2.5x10/-6/ torr by heating a TiO slug. The evaporation is simple although exact stoichiometry of TiO in deposited films is not obtained. This nonstoichiometry makes the film semiconducting with typical room temperature resistivities, as shown in the following table. Comparison of Resistivities in TiO Films

25 degrees C

Resistivity

Sample No. Pressure Range Thickness 10/-3/ ohm-cm

E-106 2.5x10/-5/ to 4,000 angstroms 0.76

2x10/-6/ torr

E-192 (2-6)x10/-6/ torr 400 angstroms 1.2

E-193 (4-6)x10/-6/ torr 800 angstroms 1.1. Comparison of H(c) in permalloy films deposited with and without TiO(x) smoothing/...