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Solid State Lasers With Molded Reflectors

IP.com Disclosure Number: IPCOM000089201D
Original Publication Date: 1977-Sep-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Marinace, JC: AUTHOR

Abstract

Semiconductor laser structures with planar or curved parallel reflectors which are perpendicular to the plane of the laser junction can be made by positioning a quartz mask in contact with a substrate for epitaxial growth of devices in the openings of the mask. The laser junctions can be grown into or diffused later into the devices.

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Solid State Lasers With Molded Reflectors

Semiconductor laser structures with planar or curved parallel reflectors which are perpendicular to the plane of the laser junction can be made by positioning a quartz mask in contact with a substrate for epitaxial growth of devices in the openings of the mask. The laser junctions can be grown into or diffused later into the devices.

The sides of the mask openings determine the optical properties of the reflector. Combinations of convex-convex, concave-concave, convex-plano, and concave-plano are examples of reflector structures capable of producing lasers with narrow emitting regions. Upon cooling after epitaxial growth, the semiconductor, usually GaAs, contracts more than the quartz mask; hence, the mask can be easily removed.

In some cases it may be desirable to have the reflectors not perpendicular to the plane of the laser junction but at some particular angle (e.g., Brewster's angle). This is accomplished in the same way as described above.

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