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Browse Prior Art Database

Electron Beam Resist Development Process

IP.com Disclosure Number: IPCOM000089243D
Original Publication Date: 1977-Oct-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kitcher, JR: AUTHOR

Abstract

Ketone developers are employed to remove the electron-beam exposed portions of methacrylic acid-methylmethacrylate polymers which contain anhydride links.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Electron Beam Resist Development Process

Ketone developers are employed to remove the electron-beam exposed portions of methacrylic acid-methylmethacrylate polymers which contain anhydride links.

3-pentanone at room temperature removes the exposed portions with a 5:1 ratio of removal of exposed resist (at J = 1 x 10/-5/ coul/cm/2/ 25 KV) to unexposed resist. A ketone diluent, 3-heptanone can be added as a diluent in a proportion of 1 part 3-heptanone to 4 parts 3-pentanone in order to reduce the unexposed removal rate to Approx. = 0. This developer mixture can be used to develop an anhydride containing resist layer on top of a layer of methacrylic acid- methylmethacrylate copolymer layer, which is subsequently developed in a methyl CELLOSOLVE*-isopropanol mixture to provide a high resolution lift-off structure. * Trademark of Union Carbide Corporation.

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