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Improvement of Oxide Integrity by Pre Oxidation Gettering

IP.com Disclosure Number: IPCOM000089248D
Original Publication Date: 1977-Oct-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Deines, J: AUTHOR [+4]

Abstract

The future of FET (field-effect transistor) technology will be dependent on the ability to fabricate high quality and reliable thin thermal oxides. The thermal oxide will have to possess high dielectric strength and maintain this reliability throughout the lifetime of the device. In the past, it has been shown that the integrity (breakdown voltage) of thermally grown SiO(2) is dependent on the quality of the silicon precleaning techniques prior to oxidation and the oxidation parameters. It has been found that specific cleaning techniques are successful on specific substrates while other substrates yield poor quality silicon oxides, independent of the precleaning technique. The same phenomenon is observed with oxidation techniques.

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Improvement of Oxide Integrity by Pre Oxidation Gettering

The future of FET (field-effect transistor) technology will be dependent on the ability to fabricate high quality and reliable thin thermal oxides. The thermal oxide will have to possess high dielectric strength and maintain this reliability throughout the lifetime of the device. In the past, it has been shown that the integrity (breakdown voltage) of thermally grown SiO(2) is dependent on the quality of the silicon precleaning techniques prior to oxidation and the oxidation parameters. It has been found that specific cleaning techniques are successful on specific substrates while other substrates yield poor quality silicon oxides, independent of the precleaning technique. The same phenomenon is observed with oxidation techniques. The incorporation of small percentages of HCl in the oxidation ambient results in improvement in silicon oxide integrity when oxidation is performed on specific substrates, but with other substrates HCl incorporation provides little advantage.

It has been found that gettering techniques, prior to gate oxidation, result in a dramatic improvement in silicon oxide integrity. For example, a sample consisting of 0.4 ohm-cm N type <100> silicon substrate was subjected to a 70 KeV, 6x10/15/cm/-2/, argon implant. The implant was performed on half of the wafer backside; the other half was used as a control. The implant was followed by an argon anneal at 1000 Degrees C for 1 hour. The wafe...