Browse Prior Art Database

Inserting a Thermally Grown SiO(2) Layer Into a Magnetic Bubble Structure

IP.com Disclosure Number: IPCOM000089267D
Original Publication Date: 1977-Oct-01
Included in the Prior Art Database: 2005-Mar-04
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Brunsch, A: AUTHOR [+4]

Abstract

To build up the structure, the SiO(2) layer is produced by thermally oxidizing an Si substrate. After depositing an amorphous bubble layer on the SiO(2) and connecting the bubble layer to a carrier disk, the substrate is completely removed and replaced by a pattern of conductive lines.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Inserting a Thermally Grown SiO(2) Layer Into a Magnetic Bubble Structure

To build up the structure, the SiO(2) layer is produced by thermally oxidizing an Si substrate. After depositing an amorphous bubble layer on the SiO(2) and connecting the bubble layer to a carrier disk, the substrate is completely removed and replaced by a pattern of conductive lines.

Si substrate 1 is thermally oxidized until SiO(2) layer 2 has the required thickness (Fig. 1). On SiO(2) layer 2 an amorphous layer of bubble material 3 is deposited (Fig. 2) and connected to carrier disk 4 (Fig. 3) by gluing, soldering or similar techniques. Then Si substrate 1 is completely removed, for example, by etching (Fig. 4), and replaced by a layer of conductive material which is transformed into a pattern 5 of conductive lines (Fig. 5), preferably using photolithographic methods. Thermally grown SiO(2) has better isolation properties than the sputtered or CVD-produced SiO(2) previously used.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]