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Neutralization of Surface Charging Problems in Secondary Ion Mass Spectrometry

IP.com Disclosure Number: IPCOM000089355D
Original Publication Date: 1977-Jul-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Conlin, BD: AUTHOR [+4]

Abstract

Described is a technique to reduce and compensate for the surface charge-up problem during the characterization of insulator (e.g., MQo/dielectric glass) by secondary ion mass spectrometry.

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Neutralization of Surface Charging Problems in Secondary Ion Mass Spectrometry

Described is a technique to reduce and compensate for the surface charge- up problem during the characterization of insulator (e.g., MQo/dielectric glass) by secondary ion mass spectrometry.

When a conductor or semiconductor is sputtered, the surface potential is closely determined by the target potential, and thus the secondary ion acceleration is precisely controlled by the setting of the energy window. However, in the case of the Mgo-film with a thickness of about 2500 angstroms deposited either on a SiO(2) (5000 angstroms)/Si substrate or on the dielectric glass of a gas display panel (GDP), the structure behaves like an insulator. Since no direct connection to the target potential exists, the surface of Mgo may charge up under ion bombardment. This charge-up not only causes instabilities in the ion signal, but may also result in uncontrollable shifts in the effective secondary ion acceleration potential. Such shifts make the true position of the energy window unknown, rendering any interpretation of spectra questionable.

In order to avoid the surface charge-up problem mentioned above, most commercial solid state surface analytical instruments use a traditional heated compensation filament to generate low energy electrons for surface charge neutralization. However, this method is restricted to heat-resistant samples, because the heat radiated from the compensation filament may change the initial surface state of samples. In addition, contamination caused by the emitting particles from such compensation filament, neutral and ionized, es...