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Horizontal Multijunction Solar Cells on Semiconductor Substrates

IP.com Disclosure Number: IPCOM000089395D
Original Publication Date: 1977-Oct-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Hovel, HJ: AUTHOR

Abstract

Junction isolated photoelectric conversion devices can be made using a graded doping structure between the photoactive junction and an isolating junction such that the drift field, as shown in Fig. 1, both enhances photogenerated carrier collection at the photoactive junction and enhances isolation at the isolating junction. A structural example is shown in Fig. 2.

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Horizontal Multijunction Solar Cells on Semiconductor Substrates

Junction isolated photoelectric conversion devices can be made using a graded doping structure between the photoactive junction and an isolating junction such that the drift field, as shown in Fig. 1, both enhances photogenerated carrier collection at the photoactive junction and enhances isolation at the isolating junction. A structural example is shown in Fig. 2.

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