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Plasma Etching of Quartz and Metals

IP.com Disclosure Number: IPCOM000089485D
Original Publication Date: 1977-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Patel, KV: AUTHOR

Abstract

Resists used for plasma (reactive ion) etching of quartz or metals are not suitable for controlling image shapes and dimensions because of resist flow during the etching process.

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Plasma Etching of Quartz and Metals

Resists used for plasma (reactive ion) etching of quartz or metals are not suitable for controlling image shapes and dimensions because of resist flow during the etching process.

The resist system shown in Fig. 1 may be used in the process illustrated in Figs. 2-5 to plasma-etch quartz disposed over metal. A similar system can be used to etch metal.

In Fig. 1 metallization 4, such as aluminum, is disposed on a substrate 2. Disposed atop the metal is quartz 6, which is preferably sputtered. Atop the quartz is a polyimide 7, which has disposed thereon a resin glass 8, such as polydimethylsiloxane resin. The final layer 10 is a standard photoresist, such as AZ1350J* or WAYCOAT IC**.

In Fig. 2 photoresist layer 10 is exposed and developed in the desired pattern, leaving an undesirable resist scum 12 due to electron (E)-beam scattering. This may be removed by ashing in oxygen, with glass 8 protecting polyimide 7 from attack. In the next step (Fig. 3), glass 8 and polyimide 7 are etched by plasma etching to expose quartz layer 6.

In the next step (Fig. 4), quartz layer 6 is plasma etched, using polyimide 7 as an etch mask. During this step, resin glass layer 8 and part of the polyimide disintegrate. Following the definition of the pattern in quartz layer 6, polyimide layer 7 is completely removed by reactive ion etching (Fig. 5).

Substantially the same steps may be used to plasma etch the metal layer 4 without the use of quartz layer...