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Masking Material for the Reactive Ion Etching of Metals

IP.com Disclosure Number: IPCOM000089490D
Original Publication Date: 1977-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Feng, BC: AUTHOR [+3]

Abstract

An organosilicate glass which is spun onto a wafer and then cured is an effective masking material for the reactive ion etching of metals. The mask, typically a polydimethylsiloxane resin, is formed using conventional photoresist masking techniques and reactive ion etching in CF(4) gas.

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Masking Material for the Reactive Ion Etching of Metals

An organosilicate glass which is spun onto a wafer and then cured is an effective masking material for the reactive ion etching of metals. The mask, typically a polydimethylsiloxane resin, is formed using conventional photoresist masking techniques and reactive ion etching in CF(4) gas.

In the process a polysulfone layer is first formed atop the metal, such as aluminum, which is to be etched. The organosilicate glass is then spun on, and a conventional photoresist is exposed and developed conventionally, so as to pattern the organosilicate glass. The glass is etched in CF(4) and the polysulfone underlayer is etched in O(2) to expose portions of the aluminum. The reactive ion etching residue is removed with a buffered hydrofluoric acid solution. The metal is then reactively ion etched in a mixture of CCl(4) and argon.

The organosilicate glass layer remains virtually intact while the polysulfone layer is severely undercut, and follows the masking profile of the organosilicate glass layer.

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