Browse Prior Art Database

Plasma Reaction Chamber

IP.com Disclosure Number: IPCOM000089492D
Original Publication Date: 1977-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Galicki, A: AUTHOR [+4]

Abstract

A problem has been recognized relating to the etch-rate gradient across the cathode surface in plasma reaction chambers due to the physical placement of the gas inlet and pumping ports.

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Plasma Reaction Chamber

A problem has been recognized relating to the etch-rate gradient across the cathode surface in plasma reaction chambers due to the physical placement of the gas inlet and pumping ports.

Experimentation carried out in a capacitively coupled diode plasma chamber demonstrated that there exists a significant gradient (as high as 44.6%) between the etch rate of a blanket Al-Cu wafer placed near the gas inlet port in comparison with a wafer placed further down stream. This apparatus was equipped with a conventional "cross-flow" gas system.

The etch rate gradient problem can be eliminated by an optimum placement of the gas inlet manifold above the cathode surface and the axially located pumping port below the cathode so that the gas flow pattern would result in a normal direction, as well as symmetrically, about the cathode surface, as shown in the figure.

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