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Electron Beam Contamination as a Mask

IP.com Disclosure Number: IPCOM000089493D
Original Publication Date: 1977-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Morrissey, JM: AUTHOR [+2]

Abstract

When an electron beam, for example, in a scanning electron microscope impinges on a sample, it deposits a film of contamination. The contamination is composed of hydrocarbons that escape from the vacuum diffusion pump. This contamination layer (electron-beam deposited film) may be used to form a pattern. As depicted in Fig. 1, when the contamination film is deposited on a metal film in a pattern, then the contamination film becomes a mask. Thus, without using a photoresist layer, the metal may be etched into a desired pattern.

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Electron Beam Contamination as a Mask

When an electron beam, for example, in a scanning electron microscope impinges on a sample, it deposits a film of contamination.

The contamination is composed of hydrocarbons that escape from the vacuum diffusion pump. This contamination layer (electron-beam deposited film) may be used to form a pattern. As depicted in Fig. 1, when the contamination film is deposited on a metal film in a pattern, then the contamination film becomes a mask. Thus, without using a photoresist layer, the metal may be etched into a desired pattern.

Fig. 2 depicts the desired pattern subsequent to metal etch and removal of the film deposited by the electron beam.

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