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Etching Method Utilizing High Purity Copper

IP.com Disclosure Number: IPCOM000089509D
Original Publication Date: 1977-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

DuBois, LW: AUTHOR [+3]

Abstract

This article relates to an improved evaporation processing step utilized in the production of gas display panels. In fabricating the panels, evaporation processing is utilized in covering glass substrates with chrome-copper-chrome metallurgy. The metallurgy is eventually etched into narrow parallel lines which comprise display cell electrodes.

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Etching Method Utilizing High Purity Copper

This article relates to an improved evaporation processing step utilized in the production of gas display panels. In fabricating the panels, evaporation processing is utilized in covering glass substrates with chrome-copper-chrome metallurgy. The metallurgy is eventually etched into narrow parallel lines which comprise display cell electrodes.

Problems have occurred during the copper etching which result in severe undercutting of lines of certain substrates due to their tendency to etch faster than other substrates. In addition, it has been recognized that undercutting sometimes occurs on certain lines of a substrate and not on other lines of the same substrate. This results in line width variations which effect the voltage characteristics of completed panels and, in addition, causes product defects at line width test, reflow and final test sectors of the production line.

It has been found that the use of 99.999% pure copper rather than lower purity copper will tend to alleviate this problem. The use of the high purity copper results in uniform etching rates for the substrates and final production of uniform line widths.

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