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Preferential Etch Scheme for GaAs GaA1As

IP.com Disclosure Number: IPCOM000089613D
Original Publication Date: 1977-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Burstell, CB: AUTHOR [+3]

Abstract

A mixture of oxygen (O(2)) and dichlorodifluoromethane (CCL(2)F(2)) may be used in a plasma to dry etch gallium arsenide.

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Preferential Etch Scheme for GaAs GaA1As

A mixture of oxygen (O(2)) and dichlorodifluoromethane (CCL(2)F(2)) may be used in a plasma to dry etch gallium arsenide.

The mixture will preferentially etch gallium arsenide in a gallium arsenide- gallium aluminum arsenide heterostructure. Masking may be used for local structural features.

An etch rate of approximately 10 Microns per minute is achieved. Using a mixture flow rate of 2 psi for each ingredient, at a power rating of 50 watts in a chamber vacuum of 10/-4/, 100 Microns of gallium arsenide can be etched in 15 minutes.

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