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Means to Ion Implant Thin Polycrystalline Silicon Gates Without Implanting Ions into Insulating Layer Beneath Gate

IP.com Disclosure Number: IPCOM000089615D
Original Publication Date: 1977-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

VanVechten, JA: AUTHOR

Abstract

Ion implantation at normal incidence, as in the prior art, allows ions to pass between the grains of polycrystalline silicon (Si) of a thin gate into the SiO(2) insulating layer below. This has deleterious effects on the insulator. This problem can be solved by implanting the ions at nonnormal incidence. To affect a uniform implantation, the wafer to be implanted on the ion source can be rotated. Alternately, multiple ion sources can be employed so that the Si grains of the gate will be uniformly implanted.

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Means to Ion Implant Thin Polycrystalline Silicon Gates Without Implanting Ions into Insulating Layer Beneath Gate

Ion implantation at normal incidence, as in the prior art, allows ions to pass between the grains of polycrystalline silicon (Si) of a thin gate into the SiO(2) insulating layer below. This has deleterious effects on the insulator. This problem can be solved by implanting the ions at nonnormal incidence. To affect a uniform implantation, the wafer to be implanted on the ion source can be rotated. Alternately, multiple ion sources can be employed so that the Si grains of the gate will be uniformly implanted.

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