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Browse Prior Art Database

Use of Silicides in Overlapping Polysilicon Gate Processes

IP.com Disclosure Number: IPCOM000089616D
Original Publication Date: 1977-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Crowder, BL: AUTHOR [+3]

Abstract

Reliability of polysilicon gate field-effect transistors can be improved by the use of silicides to produce a thicker oxide over the polysilicon gate electrode. This may be accomplished by evaporating a metal from the group of Rh, W or Ta over the entire area. By reacting at 600 Degrees C a metal silicide is formed with the polysilicon of the gate. The metal over the SiO(2) areas is removed by chemical etching. In a subsequent SiO(2) growth step the SiO(2) formed over the silicide is 2-3 times thicker than that which forms over the SiO(2) resulting in thicker dielectric isolation over the polysilicon gate and, hence, increased reliability.

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Use of Silicides in Overlapping Polysilicon Gate Processes

Reliability of polysilicon gate field-effect transistors can be improved by the use of silicides to produce a thicker oxide over the polysilicon gate electrode. This may be accomplished by evaporating a metal from the group of Rh, W or Ta over the entire area. By reacting at 600 Degrees C a metal silicide is formed with the polysilicon of the gate. The metal over the SiO(2) areas is removed by chemical etching. In a subsequent SiO(2) growth step the SiO(2) formed over the silicide is 2-3 times thicker than that which forms over the SiO(2) resulting in thicker dielectric isolation over the polysilicon gate and, hence, increased reliability.

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