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Metallurgies for Improving Thermal Stability of Metal GaAs Junctions

IP.com Disclosure Number: IPCOM000089618D
Original Publication Date: 1977-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Ho, PS: AUTHOR [+3]

Abstract

Instability during annealing of metal-GaAs junctions used in lasers can be overcome by forming as a part of the junction a transition metal/near noble metal/GaAs structure or a transition metal/GaAs structure. Examples of transition metals are Ti, Nb, Ta, Zr, V and Hf, and examples of the near noble metals are Ni, Pd, Rh and Pt.

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Metallurgies for Improving Thermal Stability of Metal GaAs Junctions

Instability during annealing of metal-GaAs junctions used in lasers can be overcome by forming as a part of the junction a transition metal/near noble metal/GaAs structure or a transition metal/GaAs structure. Examples of transition metals are Ti, Nb, Ta, Zr, V and Hf, and examples of the near noble metals are Ni, Pd, Rh and Pt.

The junction with the near noble metal layer is formed by evaporating the near noble metal on the GaAs and forming a compound layer by heat treatment. This is followed by sequential evaporations of the transition metal and Au. The junction without the near noble metal layer is formed by sequential evaporations of the transition metal and Au on the GaAs.

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