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High Pressure Postmetal Anneal of MOS and MNOS Structures

IP.com Disclosure Number: IPCOM000089620D
Original Publication Date: 1977-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fowler, AB: AUTHOR

Abstract

Varying the pressure of forming gas or H(2) ambient during postmetal anneal offers several advantages. The most obvious advantage is that at normal postmetal anneal temperatures (700-400 Degrees C) the anneal time could be reduced by increasing the pressure. Another is that above 400 Degrees C at atmospheric pressure the reaction of hydrogen at the silicon interface seems to reverse so that hydrogen leaves the interface. At high pressures this does not happen.

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High Pressure Postmetal Anneal of MOS and MNOS Structures

Varying the pressure of forming gas or H(2) ambient during postmetal anneal offers several advantages. The most obvious advantage is that at normal postmetal anneal temperatures (700-400 Degrees C) the anneal time could be reduced by increasing the pressure. Another is that above 400 Degrees C at atmospheric pressure the reaction of hydrogen at the silicon interface seems to reverse so that hydrogen leaves the interface. At high pressures this does not happen.

Improved MOS and MNOS devices can therefore be obtained by postmetal annealing at high pressures. Annealing under high temperatures causes hydrogen to diffuse through the Si(3)N(4) insulation, and the surface states are thereby annealed. The annealing reaction will be extended to higher temperatures by higher pressures.

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