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Radiation Exposed Resist Developer

IP.com Disclosure Number: IPCOM000089714D
Original Publication Date: 1977-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cortellino, CA: AUTHOR

Abstract

An improved developer and development process for radiation (such as electron-beam)-exposed methyl methacrylate-methacrylic acid copolymer resist layers, including such polymers which contain methyl-methacrylic anhydride segments, is comprised of one part of diacetone alcohol and two parts of hexyl acetate. The development is accomplished by immersing the exposed layer for about 10-15 minutes at about 40 degrees C.

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Radiation Exposed Resist Developer

An improved developer and development process for radiation (such as electron-beam)-exposed methyl methacrylate-methacrylic acid copolymer resist layers, including such polymers which contain methyl-methacrylic anhydride segments, is comprised of one part of diacetone alcohol and two parts of hexyl acetate. The development is accomplished by immersing the exposed layer for about 10-15 minutes at about 40 degrees C.

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