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Achieving Uniform Etch Rates in Reactive Ion Plasma Etching Processes

IP.com Disclosure Number: IPCOM000089731D
Original Publication Date: 1977-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gartner, HM: AUTHOR [+4]

Abstract

This technique eliminates variations in etch rates, which are inherent in a plasma etching process, by means of compensation.

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Achieving Uniform Etch Rates in Reactive Ion Plasma Etching Processes

This technique eliminates variations in etch rates, which are inherent in a plasma etching process, by means of compensation.

Conventionally, in plasma etching tools the physical spacing between the anode and cathode is fixed so that the distance between the top surface of each wafer on the cathode surface and the anode is the same. All wafers rest directly on the cathode surface and in the same plane, resulting in non-uniform etch rates from wafer to wafer and even within a wafer.

By selectively spacing the wafers from the cathode with quartz spacers, the uniformity of the etching rate is improved. In capacitively-coupled diode systems equipped with a five-position quartz cathode for 2 1/4'' diameter wafers, spacers under the wafers at the periphery were found to improve the etch rate variation among the wafers.

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