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Browse Prior Art Database

Composite Integrated Capacitor

IP.com Disclosure Number: IPCOM000089738D
Original Publication Date: 1977-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Azzis, D: AUTHOR

Abstract

Shown in Fig. 1A is the structure of a composite integrated capacitor which can provide capacitance values above a hundred picofarads. The electrical equivalent is represented in the schematic of Fig. 1B.

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Composite Integrated Capacitor

Shown in Fig. 1A is the structure of a composite integrated capacitor which can provide capacitance values above a hundred picofarads. The electrical equivalent is represented in the schematic of Fig. 1B.

The composite structure comprises two reverse biased junction capacitors in parallel with one metal-oxide semiconductor (MOS) capacitor.

The MOS capacitor comprises the capacitor between metal layer 1, SiO(2) layer 2 and N/++/ emitter diffusion 3. The P/++/ base diffusion and collector contact 5 have been provided to add two reverse biased junction capacitors to the MOS capacitor. These capacitors are emitter-base junction capacitor C(EB) and the collector-base junction capacitor C(CB).

Consequently, the total capacitor CT of the composite structure is equal to C(EB)+ C(CB)+ C(MOS), and has a surface equivalent to the surface of the C(MOS) capacitor. The structure exhibits a parasitic capacitor, which is the capacitor of the epitaxial bed isolation junction.

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