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Scanning Electron Beam Induced Polymerization of Hexachlorobutadiene on Substrates

IP.com Disclosure Number: IPCOM000089785D
Original Publication Date: 1977-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hiraoka, H: AUTHOR [+2]

Abstract

Hexachlorobutadiene shows a high sensitivity for polymerization under scanning electron beams. A scanning Auger electron gun was used to generate polymer patterns on a silicon oxide layer of a silicon wafer, which was cooled at - 50 Degrees C. The pressure of the vacuum chamber was maintained at 10/-5/ torr. The electron beams were scanner at a rate of 10/-5/ C/cm/2/ at 2.5 KeV.

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Scanning Electron Beam Induced Polymerization of Hexachlorobutadiene on Substrates

Hexachlorobutadiene shows a high sensitivity for polymerization under scanning electron beams. A scanning Auger electron gun was used to generate polymer patterns on a silicon oxide layer of a silicon wafer, which was cooled at - 50 Degrees C. The pressure of the vacuum chamber was maintained at 10/-5/ torr. The electron beams were scanner at a rate of 10/-5/ C/cm/2/ at 2.5 KeV.

This experiment shows the feasibility of the scanning electron-beam-induced polymerization of hexachlorobutadiene.

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