Browse Prior Art Database

Negative or Positive Photoresist

IP.com Disclosure Number: IPCOM000089789D
Original Publication Date: 1977-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Pacansky, J: AUTHOR

Abstract

Linear, noncross-linked poly p-hydroxy styrene was mixed with a poly function diazo oxide. When thin films were cast onto a salt substrate and irradiated with ultraviolet light in air, the infrared spectrum showed that indene carboxylic acid was formed. Similar exposures in vacuum showed (via infrared) the formation of cross-linked phenyl ester. Thus, irradiations in air produce base soluble carboxylic acid, and irradiations in vacuum produce, relative to the exposed area, base insoluble cross-linked phenyl ester.

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Negative or Positive Photoresist

Linear, noncross-linked poly p-hydroxy styrene was mixed with a poly function diazo oxide. When thin films were cast onto a salt substrate and irradiated with ultraviolet light in air, the infrared spectrum showed that indene carboxylic acid was formed. Similar exposures in vacuum showed (via infrared) the formation of cross-linked phenyl ester. Thus, irradiations in air produce base soluble carboxylic acid, and irradiations in vacuum produce, relative to the exposed area, base insoluble cross-linked phenyl ester.

A film of the poly p-hydroxy styrene and a difunctional diazo-oxide was cast onto a silicon wafer. Photolysis through a mask in air, followed by an exposure in vacuum with the mask removed, produced a positive image in the areas not covered by the mask when the wafer was developed with an aqueous base solution.

Similarly a silicon wafer with a thin film of the mixture was first irradiated through a mask in vacuum and followed by an irradiation in air with the mask removed. This procedure produced a negative image after development with the same aqueous base solution.

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