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Resist Removal With Synchrotron Radiation

IP.com Disclosure Number: IPCOM000089826D
Original Publication Date: 1977-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Eastman, DE: AUTHOR [+5]

Abstract

It has been observed that polymeric resist materials can be removed from a substrate by exposing them to synchrotron radiation in the presence of a gas.

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Resist Removal With Synchrotron Radiation

It has been observed that polymeric resist materials can be removed from a substrate by exposing them to synchrotron radiation in the presence of a gas.

Resist removal was observed by exposure to broad band radiation at the DESY synchrotron in Hamburg, West Germany, operating at a current of 8 ma with electron energies between 3.5 and 5 GeV. The effect was observed for polymethylmethacrylate and other polymers and in gas atmospheres of He, air, and CO(2) at pressures between 0.3 and 2 torr. 200-mesh copper grids and X- ray masks with 1 mu m linewidths were used as masks for the exposure. It is estimated that a spatial resolution of about 3 mu m has been obtained.

Accordingly, heavy exposure of broadband synchrotron radiation in the presence of gas allows resist removal during exposure so that the necessity for a wet development step is eliminated.

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