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Browse Prior Art Database

Transmission Line Biasing

IP.com Disclosure Number: IPCOM000089853D
Original Publication Date: 1968-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Brennan, PA: AUTHOR [+2]

Abstract

In this transmission line, the pulse response is improved by applying a bias between a conductor and the ground plane which are spaced from each In this transmission line, the pulse response is improved by applying a bias between a conductor and the ground plane which are spaced from each other by a layer of semiconductive material and a dielectric layer. Transmission line 1, consisting of ground plane 2 and conductor 3 separated by a layer of semiconductor material 4 and an oxide layer 5, is shown. A source of DC potential 6, variable from 0 to 100 volts, connects across ground plane 2 and conductor 3.

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Transmission Line Biasing

In this transmission line, the pulse response is improved by applying a bias between a conductor and the ground plane which are spaced from each In this transmission line, the pulse response is improved by applying a bias between a conductor and the ground plane which are spaced from each other by a layer of semiconductive material and a dielectric layer. Transmission line 1, consisting of ground plane 2 and conductor 3 separated by a layer of semiconductor material 4 and an oxide layer 5, is shown. A source of DC potential 6, variable from 0 to 100 volts, connects across ground plane 2 and conductor 3.

A pulse transmitted over transmission line 1 is improved considerably if a positive value of voltage is applied between ground plane 2 and conductor 3 when particular thicknesses of semiconductor 4 and layer 5 are used. The thickness of layer 4 is equal to or less than 2 mils and the thickness of layer 5 is equal to or less than 2000 angstroms. Increasing the thicknesses of layers 4 and 5, either together or separately from the stated values, diminishes the effect on a transmitted pulse rapidly. The effect of applying the voltage to transmission line 1 is that the system is much less dispersive than in the unbiased state, thus improving both the rise time and the amplitude of the pulse. The phenomenon applies for resistivity values in silicon in the range of 5 ohm-cm to 15 ohm-cm for positive bias voltages of up to 100 volts DC.

The arran...