Browse Prior Art Database

Sensing System

IP.com Disclosure Number: IPCOM000089888D
Original Publication Date: 1968-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 55K

Publishing Venue

IBM

Related People

Lincoln, P: AUTHOR

Abstract

The magnitude of sense signals developed in long sense lines 10 of a memory shown in A is increased by providing, at spaced apart points in lines 10, gated shorts GS to ground. Each sense line 10 of the memory has one or more GS's connected so as to produce a short to ground when activated by gated short select unit 12. GS's 14 are connected to lines 10 at a column of points 16. GS's 18 are connected to sense lines 10 at a column of points 20. When word driver 22 applies a pulse to a column of magnetic film bits 24 through a word line, e.g., line 26, a voltage is induced in lines 10.

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Sensing System

The magnitude of sense signals developed in long sense lines 10 of a memory shown in A is increased by providing, at spaced apart points in lines 10, gated shorts GS to ground. Each sense line 10 of the memory has one or more GS's connected so as to produce a short to ground when activated by gated short select unit 12. GS's 14 are connected to lines 10 at a column of points 16. GS's 18 are connected to sense lines 10 at a column of points 20. When word driver 22 applies a pulse to a column of magnetic film bits 24 through a word line, e.g., line 26, a voltage is induced in lines 10.

The induced voltage has a first pulse 28, as in B, propagating toward a respective sense amplifier 30 and a second pulse propagating toward the respective GS's 18 and appears as pulse 32 in B. The reflected second pulse 32 is then combined with the first pulse 28 to form a composite pulse 34.

The film memory can have, for example, a sense line with a characteristic impedance Zo of fifty ohms, a signal propagation velocity of 0.2 nanoseconds/inch and a signal base width of six nanoseconds. With GS's GS placed at intervals of four inches on each sense line 10, signal 34, delivered to amplifiers 30, is approximately 1.5 times the magnitude of the first pulse 20. The GS's can be appropriate transistors placed on chips, made by monolithic circuit technology, to produce impedances as low as approximately two ohms.

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