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Current Switch Emitter Follower Interconnection

IP.com Disclosure Number: IPCOM000090003D
Original Publication Date: 1969-Jan-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Wu, WW: AUTHOR

Abstract

This common emitter input transistor 10 and emitter-follower output transistor 12 of a current switch can be formed in a single diffusion region 14 with the load resistor 16 for transistor 10. Transistors 10 and 12 are diffused into a single isolation region 14. The collector connection for transistor 12 then functions to couple transistors 10 and 12 to the positive power supply Vcc. Transistor 12 is connected directly to Vcc by this connection. Transistor 10 is connected to Vcc through resistor 16 which is formed by an interconnection through the buried subcollector of the isolation region. This arrangement reduces the number of interconnections and silicon area used to make the transistors. It also reduces the stray capacitances associated with transistor 10.

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Current Switch Emitter Follower Interconnection

This common emitter input transistor 10 and emitter-follower output transistor 12 of a current switch can be formed in a single diffusion region 14 with the load resistor 16 for transistor 10. Transistors 10 and 12 are diffused into a single isolation region 14. The collector connection for transistor 12 then functions to couple transistors 10 and 12 to the positive power supply Vcc. Transistor 12 is connected directly to Vcc by this connection. Transistor 10 is connected to Vcc through resistor 16 which is formed by an interconnection through the buried subcollector of the isolation region. This arrangement reduces the number of interconnections and silicon area used to make the transistors. It also reduces the stray capacitances associated with transistor 10.

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