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Monolithic Storage Cell Sense Circuit

IP.com Disclosure Number: IPCOM000090163D
Original Publication Date: 1969-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Leung, H: AUTHOR

Abstract

The circuit, drawing A, is for coupling sense amplifier 2 to bit wires 4 and 5 of monolithic storage cell 6. In a read operation, cell 6 produces currents on wires 4 and 5 in circuit with current source 11. When a 1 is read, a current 11, drawing B, flows in wire 4 and a current 10 flows in wire 5. When a 0 is read, current 10 flows in each wire 4 and 5. A network of diodes 7 and 8 and resistors 9 and 10 is connected to provide voltages V0 and V1 at the input terminals of amplifier 2. Diodes 7 and 8 limit the voltage on wires 4 and 5 to enable storage cell 6 to undergo a nondestructive read operation. Resistors 9 and 10 have values to reduce the voltage V0 below the threshold for turning on a diode but to not similarly reduce the voltage V1.

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Monolithic Storage Cell Sense Circuit

The circuit, drawing A, is for coupling sense amplifier 2 to bit wires 4 and 5 of monolithic storage cell 6. In a read operation, cell 6 produces currents on wires 4 and 5 in circuit with current source 11. When a 1 is read, a current 11, drawing B, flows in wire 4 and a current 10 flows in wire 5. When a 0 is read, current 10 flows in each wire 4 and 5. A network of diodes 7 and 8 and resistors 9 and 10 is connected to provide voltages V0 and V1 at the input terminals of amplifier 2. Diodes 7 and 8 limit the voltage on wires 4 and 5 to enable storage cell 6 to undergo a nondestructive read operation. Resistors 9 and 10 have values to reduce the voltage V0 below the threshold for turning on a diode but to not similarly reduce the voltage V1. Without the resistors, the voltage V0 associated with current 10 is much closer to the voltage V1. The resistors thus enhance the voltage difference on wires 4 and 5 that signifies a binary 1 or 0 at the input to amplifier 2. The circuit is also useful for storage cells in which a current 11 represents a 1 on wire 4 and a 0 on wire 5 and a current 10 flows on the other of the two wires.

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