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Browse Prior Art Database

MESFET With Threshold Source Drain Voltage

IP.com Disclosure Number: IPCOM000090181D
Original Publication Date: 1969-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Jutzi, W: AUTHOR

Abstract

The drain electrode of this FET forms a Schottky-contact with the semi-conductor. The source-drain current characteristics show a threshold voltage which can advantageously be used in logic circuit applications.

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MESFET With Threshold Source Drain Voltage

The drain electrode of this FET forms a Schottky-contact with the semi- conductor. The source-drain current characteristics show a threshold voltage which can advantageously be used in logic circuit applications.

In drawing 1 showing the FET structure, semiconductor layer 1 of N-type material is deposited onto a high resistive P-type substrate 2. Three electrodes are in direct contact with the semiconductor, source electrode S forming an ohmic contact, gate G and drain D electrodes forming Schottky-contacts. The resulting depletion zones are designated 3 and 4.

When applying source-drain Vsd and source-gate Vsg voltages, source-drain current Isd characteristics, as shown in drawing 2, are obtained, voltage Vsg is the parameter. For small values of Vsd, i.e., below threshold voltage Vt, the drain Schottky-diode yields a very high off-resistance. The transistor behaves very similar to a conventional MESFET when Vsd > Vt.

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