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Etching of Molybdenum Thin Films

IP.com Disclosure Number: IPCOM000090224D
Original Publication Date: 1969-Mar-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Grieco, MJ: AUTHOR [+2]

Abstract

Molybdenum films can be etched in a manner which produces a sloping edge to the land pattern when using a photoresist mask. The etchant consists of 25 parts of 30% hydrogen peroxide 120 parts of 90% formic acid and 10 parts water. At 35 degrees centigrade, an etch rate of about 3000 Angstroms per minute can be realized.

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Etching of Molybdenum Thin Films

Molybdenum films can be etched in a manner which produces a sloping edge to the land pattern when using a photoresist mask. The etchant consists of 25 parts of 30% hydrogen peroxide 120 parts of 90% formic acid and 10 parts water. At 35 degrees centigrade, an etch rate of about 3000 Angstroms per minute can be realized.

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