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Nondestructive Readout High Density Memory

IP.com Disclosure Number: IPCOM000090240D
Original Publication Date: 1969-Mar-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 52K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR

Abstract

The memory utilizes the write operation of an electronically addressable memory and the read operation of a beam addressable system to achieve a nondestructive readout memory. Thus, a magnetic film memory which has a high packing density in excess of 10/6/ bits/in/2/ and nondestructive readout capability is provided. Information is stored electronically using orthogonal switching of the coupled film. Readout is accomplished by a light beam utilizing the Kerr magneto-optic effects.

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Nondestructive Readout High Density Memory

The memory utilizes the write operation of an electronically addressable memory and the read operation of a beam addressable system to achieve a nondestructive readout memory. Thus, a magnetic film memory which has a high packing density in excess of 10/6/ bits/in/2/ and nondestructive readout capability is provided. Information is stored electronically using orthogonal switching of the coupled film. Readout is accomplished by a light beam utilizing the Kerr magneto-optic effects.

The word lines are deposited on a ground plane with a insulation layer. The storage films consist of two thin magnetic layers of NiFe composition which are magnetostatically coupled. A complete coupling of flux can be accomplished by edge-plating techniques. The thicknesses of the upper and the lower storage films are 300 Angstroms and 500 Angstroms respectively. A thin film 100 Angstroms of doped EuO is deposited over the upper storage film. The magnetic moment of EuO is approximately twice that of NiFe and a complete closure of flux is obtained with a thin EuO film. A dielectric enhancement layer such as Eu(2)O(3) and Gd(2)O(3) is finally deposited on EuO. The thickness of the enhancement layer is approximately 300 to 500 Angstroms and acts also as a passivation layer.

There are various advantages of this memory. A nondestructive readout is obtained. The magneto-optic readout gives a large sense signal. A very high packing density, typically...