Browse Prior Art Database

Ion Source for Integrated Circuit and Memory Element Fabrication

IP.com Disclosure Number: IPCOM000090245D
Original Publication Date: 1969-Mar-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Hart, DM: AUTHOR

Abstract

The molecular source is comprised of heater 3 for raising the temperature of material 1 to a level suitable for evaporation. The resulting vapor is ionized by an electron beam or by RF excitation. Electron beam 4 from electron gun 5 is directed by magnetic or electrostatic turning field 6 through vapor cloud 7, thus ionizing the atoms of such cloud. Plate 8, forming aperture 9, is negatively charged to extract the positive ions from the chamber for passage through aperture 10 in decelerating anode 11 to a point of use.

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Ion Source for Integrated Circuit and Memory Element Fabrication

The molecular source is comprised of heater 3 for raising the temperature of material 1 to a level suitable for evaporation. The resulting vapor is ionized by an electron beam or by RF excitation. Electron beam 4 from electron gun 5 is directed by magnetic or electrostatic turning field 6 through vapor cloud 7, thus ionizing the atoms of such cloud. Plate 8, forming aperture 9, is negatively charged to extract the positive ions from the chamber for passage through aperture 10 in decelerating anode 11 to a point of use.

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