Browse Prior Art Database

Horizontal Vapor Growth Reactor

IP.com Disclosure Number: IPCOM000090296D
Original Publication Date: 1969-Mar-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Boss, DW: AUTHOR [+3]

Abstract

This apparatus produces uniform film depositions by the pyrolysis or reduction of vapor-phase compounds. In the deposition of films, many vapor-phase source compounds have a mass which is much greater than the mass of carrier gas used to transport them through the reactors. Thus, the source compounds quickly settle out or gravitate toward the lower portions of the reactor after entering with the carrier gas streams. This results in a very nonuniform concentration distribution across the reactor's vertical axis. This apparatus has quartz tube 10 with a generally square or rectangular cross-section. At one end is provided entry port 12 for introducing the carrier gas. Preferably a baffle disk 14 is mounted over the end of entry 12 in spaced relation.

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Horizontal Vapor Growth Reactor

This apparatus produces uniform film depositions by the pyrolysis or reduction of vapor-phase compounds. In the deposition of films, many vapor-phase source compounds have a mass which is much greater than the mass of carrier gas used to transport them through the reactors. Thus, the source compounds quickly settle out or gravitate toward the lower portions of the reactor after entering with the carrier gas streams. This results in a very nonuniform concentration distribution across the reactor's vertical axis. This apparatus has quartz tube 10 with a generally square or rectangular cross-section. At one end is provided entry port 12 for introducing the carrier gas. Preferably a baffle disk 14 is mounted over the end of entry 12 in spaced relation. A second entry port 16 located on the top of tube 10 to introduce the vapor-phase source compounds. Deflector 18 is disposed below the aperture of port 16. Deflector extends all across the top of tube 10 and is made up of two walls.

Wall 19 deflects the compound entering port 16. Wall 20 confines the gas and allows it to distribute out across the width of tube 10 before emerging from a relatively narrow gap 21. The much heavier vapor-phase compounds are thus introduced into tube 10, spread out across the entire width of such tube and with flow in the longitudinal direction similar to the direction of carrier gas. The vapor-phase compound slowly settles as it traverses down tube 10 result...